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pubmed-article:8241551pubmed:abstractTextA novel cross-sectional sample preparation technique for quantum wire (QWR) structures is described. By coating a thin layer of Au with a designed pattern on the sample as a marker to indicate the position of the wire pattern, the location of the thinned area can be controlled precisely. An example of applying this technique to an InGaAs/GaAs QWR structure is demonstrated. This technique can also be applied to any other small dimensional structures or devices with specific regions of interest.lld:pubmed
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pubmed-article:8241551pubmed:issn1059-910Xlld:pubmed
pubmed-article:8241551pubmed:authorpubmed-author:ReedJ DJDlld:pubmed
pubmed-article:8241551pubmed:authorpubmed-author:ChenY PYPlld:pubmed
pubmed-article:8241551pubmed:authorpubmed-author:O'KeefeS SSSlld:pubmed
pubmed-article:8241551pubmed:authorpubmed-author:SchaffW JWJlld:pubmed
pubmed-article:8241551pubmed:authorpubmed-author:EastmanL FLFlld:pubmed
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pubmed-article:8241551pubmed:pagination157-61lld:pubmed
pubmed-article:8241551pubmed:dateRevised2006-11-15lld:pubmed
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pubmed-article:8241551pubmed:year1993lld:pubmed
pubmed-article:8241551pubmed:articleTitleSample preparation technique for cross-sectional transmission electron microscopy of quantum wire structures.lld:pubmed
pubmed-article:8241551pubmed:affiliationDepartment of Electrical Engineering, Cornell University, Ithaca, New York 14853.lld:pubmed
pubmed-article:8241551pubmed:publicationTypeJournal Articlelld:pubmed
pubmed-article:8241551pubmed:publicationTypeResearch Support, U.S. Gov't, Non-P.H.S.lld:pubmed