Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
4
pubmed:dateCreated
2011-4-8
pubmed:abstractText
Recent advances in creating rectifying gold|monolayer|silicon (Au-M-Si) junctions (namely, molecular silicon diodes) are reviewed. It is known that direct deposition of gold contacts onto molecular monolayers covalently bonded to silicon surfaces causes notable disruption to the junction structure, resulting in deteriorated performance and poor reproducibility that are unsuitable for practical applications. In the past few years, several new experimental approaches have been explored to minimize or eliminate such damage, including the "indirect" evaporation method and the pre-deposition of a protective "non-penetrating" metal. To enhance the interactions at the gold-monolayer interface, head-groups that allow bonding to gold are used to maintain the monolayer integrity. Construction of the device via flip-chip lamination and the modified polymer-assisted lift-off techniques also prohibits monolayer damage. Refining the fabrication and design techniques towards reliable molecular junctions is crucial if they are to be used in nanoelectronics for the purpose of miniaturization.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Apr
pubmed:issn
2040-3372
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
3
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
1434-45
pubmed:meshHeading
pubmed:year
2011
pubmed:articleTitle
Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon.
pubmed:affiliation
Department of Chemistry, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada.
pubmed:publicationType
Journal Article, Review, Research Support, Non-U.S. Gov't