Linked Life Data

21137796

Source:http://linkedlifedata.com/resource/pubmed/id/21137796

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
10
pubmed:dateCreated
2010-12-8
pubmed:abstractText
In this work high quality crystalline In(1_x)Sb(x) nanowires (NWs) are synthesized via a template-based electrochemistry method. Energy dispersive spectroscopy studies show that composition modulated In(1-x)Sb(x) (x approximately 0.5 or 0.7) nanowires can be attained by selectively controlling the deposition potential during growth. Single In(1-x)Sb(x) nanowire field effect transistors (NW-FETs) are fabricated to study the electrical properties of as-grown NWs. Using scanning gate microscopy (SGM) as a local gate the I(ds)-V(ds) characteristics of the fabricated devices are modulated as a function of the applied gate voltage. Electrical transport measurements show n-type semiconducting behavior for the In0.5Sb0.5 NW-FET, while a p-type behavior is observed for the In0.3Sb0.7 NW-FET device. The ability to grow composition modulated In(1-x)Sb(x) NWs can provide new opportunities for utilizing InSb NWs as building blocks for low-power and high speed nanoscale electronics.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Oct
pubmed:issn
1533-4880
pubmed:author
pubmed:issnType
Print
pubmed:volume
10
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
6779-82
pubmed:year
2010
pubmed:articleTitle
Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy.
pubmed:affiliation
Department of Electrical Engineering, University of California, Riverside, California 92521, USA.
pubmed:publicationType
Journal Article, Research Support, U.S. Gov't, Non-P.H.S.