20945932

Source:http://linkedlifedata.com/resource/pubmed/id/20945932

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Predicate	Object
rdf:type	pubmed:Citation
lifeskim:mentions	umls-concept:C0023963, umls-concept:C0032521, umls-concept:C0040707
pubmed:issue	11
pubmed:dateCreated	2010-11-24
pubmed:abstractText	We demonstrate the use of n/p polymer/polymer heterojunctions deposited by sequential solution processing to fabricate ambipolar field-effect transistors and complementary logic circuits. Electron and hole mobilities in the transistors were ?0.001-0.01 cm(2)/(V s) in air without encapsulation. Complementary circuits integrating multiple ambipolar transistors into NOT, NAND, and NOR gates were fabricated and shown to exhibit sharp signal switching with a high voltage gain.
pubmed:language	eng
pubmed:journal	http://linkedlifedata.com/resource/pubmed/journal/101504991
pubmed:status	PubMed-not-MEDLINE
pubmed:month	Nov
pubmed:issn	1944-8244
pubmed:author	pubmed-author:AhmedEilafE, pubmed-author:JenekheSamson ASA, pubmed-author:KimFelix SunjooFS, pubmed-author:SelvamSubramaniyanS
pubmed:issnType	Print
pubmed:volume	2
pubmed:owner	NLM
pubmed:authorsComplete	Y
pubmed:pagination	2974-7
pubmed:year	2010
pubmed:articleTitle	Air-stable ambipolar field-effect transistors and complementary logic circuits from solution-processed n/p polymer heterojunctions.
pubmed:affiliation	Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, USA.
pubmed:publicationType	Journal Article, Research Support, U.S. Gov't, Non-P.H.S.