Linked Life Data

20889404

Source:http://linkedlifedata.com/resource/pubmed/id/20889404

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
10
pubmed:dateCreated
2010-10-4
pubmed:abstractText
Typical perovskite oxides SrTiO? (STO) and PbZr?.??Ti?.??O? (PZT) were fabricated on GaN semiconductor substrates by pulsed laser deposition. STO and PZT films were deposited on bare GaN, TiO?, and MgO-buffered GaN. The effects of TiO? and MgO buffer-layers on the orientations and electric properties of the perovskite films were systematically studied. The crystalline properties were in situ monitored by reflective high energy electron diffraction and ex situ characterized by X-ray diffraction. It was found that the epitaxial temperature of STO and PZT was reduced by inserting a buffer layer. (111)-oriented films were obtained on bare and TiO?-buffered GaN. However, the orientations of the perovskite films were changed to be (110) when deposited on MgO buffer layer. Furthermore, PZT films deposited on MgO- and TiO?-buffered GaN show better electric performance compared with these films directly deposited on GaN. These results show that perovskite oxide could be epitaxially grown on GaN semiconductor substrates by inserting a proper buffer layer.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Oct
pubmed:issn
1525-8955
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
57
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
2192-7
pubmed:year
2010
pubmed:articleTitle
Study of the integrated growth of dielectric films on GaN semiconductor substrates.
pubmed:affiliation
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, P. R. China. yrli@uestc.edu.cn
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't