Source:http://linkedlifedata.com/resource/pubmed/id/19518792
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Predicate | Object |
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rdf:type | |
lifeskim:mentions | |
pubmed:issue |
17
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pubmed:dateCreated |
2009-6-12
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pubmed:abstractText |
The exchange between lattice and interstitial oxygen species in an oxide was studied by the 16O-18O isotope shift of the a1Deltag(v=0)-->X3Sigmag-(v=1) infrared photoluminescence band of the oxygen molecules (O2) incorporated into the interstitial voids of amorphous SiO2 (a-SiO2) by thermal annealing in 18O2 gas. A large site to site variation of the oxygen exchange rate, originating from structural disorder of a-SiO2, is found. The average exchange rate has an activation energy of approximately 2 eV, which is much larger than that for the diffusion of interstitial O2 (approximately 0.8-1.2 eV). The average exchange-free diffusion length of interstitial O2 exceeds approximately 1 microm below 900 degrees C, providing definite evidence that oxygen diffuses as interstitial molecules in a-SiO2.
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pubmed:language |
eng
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pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
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pubmed:month |
May
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pubmed:issn |
0031-9007
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pubmed:author | |
pubmed:issnType |
Print
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pubmed:day |
1
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pubmed:volume |
102
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pubmed:owner |
NLM
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pubmed:authorsComplete |
Y
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pubmed:pagination |
175502
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pubmed:year |
2009
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pubmed:articleTitle |
Oxygen exchange at the internal surface of amorphous SiO2 studied by photoluminescence of isotopically labeled oxygen molecules.
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pubmed:affiliation |
Transparent Electro-Active Materials Project, ERATO-SORST, Japan Science and Technology Agency, in Frontier Research Center, S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan. kkaji@tmu.ac.jp
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pubmed:publicationType |
Journal Article
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