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PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
17
pubmed:dateCreated
2009-6-12
pubmed:abstractText
The exchange between lattice and interstitial oxygen species in an oxide was studied by the 16O-18O isotope shift of the a1Deltag(v=0)-->X3Sigmag-(v=1) infrared photoluminescence band of the oxygen molecules (O2) incorporated into the interstitial voids of amorphous SiO2 (a-SiO2) by thermal annealing in 18O2 gas. A large site to site variation of the oxygen exchange rate, originating from structural disorder of a-SiO2, is found. The average exchange rate has an activation energy of approximately 2 eV, which is much larger than that for the diffusion of interstitial O2 (approximately 0.8-1.2 eV). The average exchange-free diffusion length of interstitial O2 exceeds approximately 1 microm below 900 degrees C, providing definite evidence that oxygen diffuses as interstitial molecules in a-SiO2.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
May
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
1
pubmed:volume
102
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
175502
pubmed:year
2009
pubmed:articleTitle
Oxygen exchange at the internal surface of amorphous SiO2 studied by photoluminescence of isotopically labeled oxygen molecules.
pubmed:affiliation
Transparent Electro-Active Materials Project, ERATO-SORST, Japan Science and Technology Agency, in Frontier Research Center, S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan. kkaji@tmu.ac.jp
pubmed:publicationType
Journal Article