Linked Life Data

19198328

Source:http://linkedlifedata.com/resource/pubmed/id/19198328

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
11
pubmed:dateCreated
2009-2-9
pubmed:abstractText
ZnO nanorod (NR) transistors were fabricated in a back-gated structure, and their electrical transport properties were investigated as a function of air pressure. A large shift (19.4 V) of threshold voltage (V(t,g)) toward negative gate bias is observed as the air pressure decreases to 9.06 x 10(-4) Pa. The shift of V(t,g) and the change in the flowing current between the source and drain electrode with changing the air pressure are fully reversible. The adsorption and desorption of oxygen molecules and/or OH groups in air are likely to be responsible for the reversibility. Most importantly, the electron concentration and the flowing current rapidly change only in a vacuum regime less than a certain pressure as likely as 1.33 x 10(-1) Pa. In contrast, in the low vacuum regime (>1.33 x 10(-1) Pa) ZnO NR transistors are insensitive to the change of air pressure. This observation indicates that nano-sized vacuum sensors based on ZnO NR transistors will be effective only in the high vacuum regime.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Nov
pubmed:issn
1533-4880
pubmed:author
pubmed:issnType
Print
pubmed:volume
8
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
5929-33
pubmed:dateRevised
2009-11-19
pubmed:meshHeading
pubmed:year
2008
pubmed:articleTitle
Ambient air effects on electrical transport properties of ZnO nanorod transistors.
pubmed:affiliation
School of Materials Science and Engineering, Inha University, Incheon 402-751, Korea.
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't, Evaluation Studies