Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
11
pubmed:dateCreated
2008-6-11
pubmed:abstractText
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:status
MEDLINE
pubmed:month
May
pubmed:issn
1094-4087
pubmed:author
pubmed:issnType
Electronic
pubmed:day
26
pubmed:volume
16
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
7641-8
pubmed:meshHeading
pubmed:year
2008
pubmed:articleTitle
Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays.
pubmed:affiliation
Los Alamos National Laboratory, MPA-CINT, MS K771, Los Alamos, New Mexico 87545, USA. chenht@lanl.gov
pubmed:publicationType
Journal Article, Research Support, U.S. Gov't, Non-P.H.S.