Source:http://linkedlifedata.com/resource/pubmed/id/16893605
| Subject | Predicate | Object | Context |
|---|---|---|---|
| pubmed-article:16893605 | rdf:type | pubmed:Citation | lld:pubmed |
| pubmed-article:16893605 | lifeskim:mentions | umls-concept:C0302523 | lld:lifeskim |
| pubmed-article:16893605 | lifeskim:mentions | umls-concept:C0700325 | lld:lifeskim |
| pubmed-article:16893605 | lifeskim:mentions | umls-concept:C0596539 | lld:lifeskim |
| pubmed-article:16893605 | lifeskim:mentions | umls-concept:C1521738 | lld:lifeskim |
| pubmed-article:16893605 | pubmed:issue | 2-3 | lld:pubmed |
| pubmed-article:16893605 | pubmed:dateCreated | 2006-12-25 | lld:pubmed |
| pubmed-article:16893605 | pubmed:abstractText | Field evaporation studies of crystalline <100> Si were performed in a three-dimensional atom-probe, which utilized a local electrode geometry. Several distinct phenomena were observed. Si field evaporation rates showed: (1) no measurable dependence on temperature below 110K, (2) an exponential dependence on evaporation rate as a function of temperature above 110K, and (3) no dependence on substrate doping (i.e., electrical conductivity) as high as 10 Omega cm in the temperature range of 40-150K. Two distinct evaporation modes were observed. The first was associated with approximately 1at% H+ in the mass spectrum. Negligible amounts of H were detected in the mass spectra of the second mode. When the pulse fraction (pf) was increased from 5% to 30%, the presence of H+ in the mass spectra, i.e. operation in the first mode, was associated with a degradation in mass resolution by as much as 80% for the 10 Omega cm Si samples. Conversely, no loss in mass resolution was detected for the approximately 0.001 Omega cm samples over the pf range studied. | lld:pubmed |
| pubmed-article:16893605 | pubmed:language | eng | lld:pubmed |
| pubmed-article:16893605 | pubmed:journal | http://linkedlifedata.com/r... | lld:pubmed |
| pubmed-article:16893605 | pubmed:status | PubMed-not-MEDLINE | lld:pubmed |
| pubmed-article:16893605 | pubmed:issn | 0304-3991 | lld:pubmed |
| pubmed-article:16893605 | pubmed:author | pubmed-author:ThompsonKeith... | lld:pubmed |
| pubmed-article:16893605 | pubmed:author | pubmed-author:SebastianJaso... | lld:pubmed |
| pubmed-article:16893605 | pubmed:author | pubmed-author:GerstlStephan... | lld:pubmed |
| pubmed-article:16893605 | pubmed:issnType | lld:pubmed | |
| pubmed-article:16893605 | pubmed:volume | 107 | lld:pubmed |
| pubmed-article:16893605 | pubmed:owner | NLM | lld:pubmed |
| pubmed-article:16893605 | pubmed:authorsComplete | Y | lld:pubmed |
| pubmed-article:16893605 | pubmed:pagination | 124-30 | lld:pubmed |
| pubmed-article:16893605 | pubmed:articleTitle | Observations of Si field evaporation. | lld:pubmed |
| pubmed-article:16893605 | pubmed:affiliation | Imago Scientific Instruments, Inc. 6300 Enterprise Lane Suite 100, Madison, WI 53711, USA. kthompson@imago.com | lld:pubmed |
| pubmed-article:16893605 | pubmed:publicationType | Journal Article | lld:pubmed |