Source:http://linkedlifedata.com/resource/pubmed/id/16893605
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Predicate | Object |
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rdf:type | |
lifeskim:mentions | |
pubmed:issue |
2-3
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pubmed:dateCreated |
2006-12-25
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pubmed:abstractText |
Field evaporation studies of crystalline <100> Si were performed in a three-dimensional atom-probe, which utilized a local electrode geometry. Several distinct phenomena were observed. Si field evaporation rates showed: (1) no measurable dependence on temperature below 110K, (2) an exponential dependence on evaporation rate as a function of temperature above 110K, and (3) no dependence on substrate doping (i.e., electrical conductivity) as high as 10 Omega cm in the temperature range of 40-150K. Two distinct evaporation modes were observed. The first was associated with approximately 1at% H+ in the mass spectrum. Negligible amounts of H were detected in the mass spectra of the second mode. When the pulse fraction (pf) was increased from 5% to 30%, the presence of H+ in the mass spectra, i.e. operation in the first mode, was associated with a degradation in mass resolution by as much as 80% for the 10 Omega cm Si samples. Conversely, no loss in mass resolution was detected for the approximately 0.001 Omega cm samples over the pf range studied.
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pubmed:language |
eng
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pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
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pubmed:issn |
0304-3991
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pubmed:author | |
pubmed:issnType |
Print
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pubmed:volume |
107
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pubmed:owner |
NLM
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pubmed:authorsComplete |
Y
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pubmed:pagination |
124-30
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pubmed:articleTitle |
Observations of Si field evaporation.
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pubmed:affiliation |
Imago Scientific Instruments, Inc. 6300 Enterprise Lane Suite 100, Madison, WI 53711, USA. kthompson@imago.com
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pubmed:publicationType |
Journal Article
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