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rdf:type
lifeskim:mentions
pubmed:issue
15
pubmed:dateCreated
2011-5-16
pubmed:abstractText
We demonstrate single-shot readout of a silicon quantum dot spin qubit, and we measure the spin relaxation time T1. We show that the rate of spin loading can be tuned by an order of magnitude by changing the amplitude of a pulsed-gate voltage, and the fraction of spin-up electrons loaded can also be controlled. This tunability arises because electron spins can be loaded through an orbital excited state. Using a theory that includes excited states of the dot and energy-dependent tunneling, we find that a global fit to the loading rate and spin-up fraction is in good agreement with the data.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Apr
pubmed:issn
1079-7114
pubmed:author
pubmed:issnType
Electronic
pubmed:day
15
pubmed:volume
106
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
156804
pubmed:year
2011
pubmed:articleTitle
Tunable spin loading and T1 of a silicon spin qubit measured by single-shot readout.
pubmed:affiliation
Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
pubmed:publicationType
Journal Article