Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
5
pubmed:dateCreated
2011-5-24
pubmed:abstractText
Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ? x ? 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the ?002? direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from In(x)Ga(1-x)N nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
May
pubmed:issn
1936-086X
pubmed:author
pubmed:issnType
Electronic
pubmed:day
24
pubmed:volume
5
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
3970-6
pubmed:meshHeading
pubmed:year
2011
pubmed:articleTitle
Epitaxial growth of InGaN nanowire arrays for light emitting diodes.
pubmed:affiliation
Department of Chemistry, University of California, Berkeley, California 94720, United States.
pubmed:publicationType
Journal Article, Research Support, U.S. Gov't, Non-P.H.S.