Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
19
pubmed:dateCreated
2011-3-25
pubmed:abstractText
The thermal decomposition of ultrathin HfO(2) films (?0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800?°C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ? 0.6 nm, no discernible morphological changes are found below ? 700?°C. Then an abrupt reaction occurs at 750?°C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800?°C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
May
pubmed:issn
1361-6528
pubmed:author
pubmed:issnType
Electronic
pubmed:day
13
pubmed:volume
22
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
195705
pubmed:meshHeading
pubmed:year
2011
pubmed:articleTitle
Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.
pubmed:affiliation
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, SAR. k.xue@unsw.edu.au
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't