Linked Life Data

21427466

Source:http://linkedlifedata.com/resource/pubmed/id/21427466

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
18
pubmed:dateCreated
2011-3-23
pubmed:abstractText
We have exploited a method for the lateral growth of multiple ZnO nanorods between electrodes in solution without the use of a metal catalyst to fabricate high performance field-effect transistors (FETs). This method enables us to directly align overlapped or overlap-free nanowires between electrodes by eliminating the vertical growth components and complex structural networks. The overlap-free ZnO nanorod FETs showed better performance with a mobility of ? 8.5 cm(2) V( - 1) s( - 1) and an on/off ratio of ? 4 × 10(5) than the overlapped ZnO nanorod FETs having a mobility of ? 5.3 cm(2) V( - 1) s( - 1) and an on/off ratio of ? 3 × 10(4). All the FETs fabricated in this work showed much better performance than the previously reported solution-based ZnO FETs.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
May
pubmed:issn
1361-6528
pubmed:author
pubmed:issnType
Electronic
pubmed:day
6
pubmed:volume
22
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
185310
pubmed:year
2011
pubmed:articleTitle
High performance field-effect transistors fabricated with laterally grown ZnO nanorods in solution.
pubmed:affiliation
School of Semiconductor and Chemical Engineering, WCU Department of BIN Fusion Technology, and Semiconductor Physics Research Center, Chonbuk National University, 664-14 Duckjin-Dong 1 Ga, Jeonju 561-756, Korea.
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't