Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
2
pubmed:dateCreated
2011-3-16
pubmed:abstractText
The thermal diffusivity of the ferroelectric family Sn(2)P(2)(Se(x)S(1 - x))(6) (0 ? x ? 1) has been measured by a high-resolution ac photopyroelectric technique, using single crystals, with the aim of studying the evolution of the ferroelectric transition with Se doping. Its change from second order character to first order while passing the Lifshitz point (x approximately 0.28) has been evaluated, as well as the splitting of the transition at high Se concentrations. The critical behavior of the ferroelectric transition in terms of the different universality classes and their underlying physical dominant effects (tricriticality, long-range dipole interactions, Lifshitz point) has been discussed using thermal diffusivity measurements in the very close vicinity of the critical temperature. This study reveals that for Se concentrations around the Lifshitz point, long-range dipole interactions do not play a significant role and that the critical parameters are close to those predicted for the Lifshitz universality class.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Jan
pubmed:issn
0953-8984
pubmed:author
pubmed:issnType
Print
pubmed:day
19
pubmed:volume
23
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
025902
pubmed:meshHeading
pubmed:year
2011
pubmed:articleTitle
Critical behavior near the Lifshitz point in Sn(2)P(2)(S(1 - x)Se(x))(6) ferroelectric semiconductors from thermal diffusivity measurements.
pubmed:affiliation
Departamento de Física Aplicada I, Escuela Técnica Superior de Ingeniería, Universidad del País Vasco, Alameda Urquijo s/n 48013-Bilbao, Spain. alberto.oleaga@chu.es
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't