Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
4
pubmed:dateCreated
2011-3-10
pubmed:abstractText
Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:issn
1532-4117
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
46
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
415-9
pubmed:dateRevised
2011-7-6
pubmed:meshHeading
pubmed:year
2011
pubmed:articleTitle
GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.
pubmed:affiliation
Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum & Minerals, Dhahran, Saudi Arabia. magondal@kfupm.edu.sa
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't