Linked Life Data

21317500

Source:http://linkedlifedata.com/resource/pubmed/id/21317500

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
12
pubmed:dateCreated
2011-2-17
pubmed:abstractText
High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Mar
pubmed:issn
1361-6528
pubmed:author
pubmed:issnType
Electronic
pubmed:day
25
pubmed:volume
22
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
125704
pubmed:year
2011
pubmed:articleTitle
Properties of uniform diameter InN nanowires obtained under Si doping.
pubmed:affiliation
Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany. gotschke@pdi-berlin.de
pubmed:publicationType
Journal Article, Research Support, U.S. Gov't, Non-P.H.S., Research Support, Non-U.S. Gov't