Source:http://linkedlifedata.com/resource/pubmed/id/21231064
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
17
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| pubmed:dateCreated |
2011-1-14
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| pubmed:abstractText |
We report that Bi?Se? thin films can be epitaxially grown on SrTiO? substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Oct
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| pubmed:issn |
1079-7114
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| pubmed:author | |
| pubmed:issnType |
Electronic
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| pubmed:day |
22
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| pubmed:volume |
105
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| pubmed:owner |
NLM
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| pubmed:authorsComplete |
Y
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| pubmed:pagination |
176602
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| pubmed:year |
2010
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| pubmed:articleTitle |
Gate-voltage control of chemical potential and weak antilocalization in Bi?Se?.
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| pubmed:affiliation |
Institute of Physics, Chinese Academy of Sciences, Beijing, China.
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| pubmed:publicationType |
Journal Article
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