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rdf:type
lifeskim:mentions
pubmed:issue
26
pubmed:dateCreated
2011-1-3
pubmed:abstractText
In this paper, a Mach-Zehnder silicon nanoplasmonic electro-optic modulator is proposed and theoretically analyzed. It is composed of horizontal metal-SiO2-Si-metal plasmonic slot waveguides for phase shifting and ultracompact V-shape splitter/combiner to link the plasmonic slot waveguides and the conventional Si dielectric waveguides. The proposed modulator can be directly integrated into existing Si electronic photonic integrated circuits (EPICs) and be fabricated using standard Si complementary metal-oxide-semiconductor (CMOS) technology. The modulator's parameters are optimized through systematic 2-dimensional numerical simulations. For a modulator with 3-µm-long Ag-SiO2(2 nm)-Si(50 nm)-Ag phase shifter and 0.35-µm-long splitter/combiner operating at 1.55-µm wavelength, simulation shows an insertion loss of ~-8 dB, an extinction ratio of ~7.3 dB - with a switching voltage of ~5.6 V, and a bandwidth of ~500 GHz. A possible approach to reduce the switching voltage is addressed.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Dec
pubmed:issn
1094-4087
pubmed:author
pubmed:issnType
Electronic
pubmed:day
20
pubmed:volume
18
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
27802-19
pubmed:meshHeading
pubmed:year
2010
pubmed:articleTitle
Theoretical investigation of silicon MOS-type plasmonic slot waveguide based MZI modulators.
pubmed:affiliation
Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore. zhusy@ime.a-star.edu.sg
pubmed:publicationType
Journal Article