Source:http://linkedlifedata.com/resource/pubmed/id/20867779
Switch to
| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
3
|
| pubmed:dateCreated |
2010-9-27
|
| pubmed:abstractText |
When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surface electron microscopy reveals striking bursts of "daughter" droplet nucleation and growth when coalescence of large "parent" droplets exposes nonplanar surface regions. We analyze the behavior, predicting a morphology-dependent congruent evaporation temperature. Based on this we propose a new approach for the self-assembly and positioning of quantum structures via droplet epitaxy, which we demonstrate at the proof-of-concept level.
|
| pubmed:language |
eng
|
| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
|
| pubmed:month |
Jul
|
| pubmed:issn |
1079-7114
|
| pubmed:author | |
| pubmed:issnType |
Electronic
|
| pubmed:day |
16
|
| pubmed:volume |
105
|
| pubmed:owner |
NLM
|
| pubmed:authorsComplete |
Y
|
| pubmed:pagination |
035702
|
| pubmed:year |
2010
|
| pubmed:articleTitle |
Decomposition controlled by surface morphology during langmuir evaporation of GaAs.
|
| pubmed:affiliation |
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. tersoff@us.ibm.com
|
| pubmed:publicationType |
Journal Article
|