Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
10
pubmed:dateCreated
2010-10-14
pubmed:abstractText
Metallic nanoparticle-decorated silicon nanowires showed considerable promise in a wide range of applications such as photocatalytic conversion, surface-enhanced Raman scattering, and surface plasmonics. However there is still insufficient amount of Raman scattering in Si nanowires with such decoration. Here we report the heteroepitaxial growth of Ag nanoparticles on Si nanowires by a surface reduction mechanism. The as-grown Ag nanoparticles exhibited highly single crystallinity with a most probable diameter of 25 nm. Raman scattering spectroscopy showed a new sideband feature at 495 cm(-1) below the first order Si transverse optical Raman peak due to HF etching. This new feature sustained after sequential surface treatments and rapid thermal annealing, therefore was attributed to polycrystalline defect at subsurface, which was confirmed by high-resolution transmission electron microscopy observations. Correlated atomic force microscopy and Raman mapping demonstrated that single Ag nanoparticle decoration significantly enhanced Raman signal of Si nanowire by a factor of 7, suggesting that it would be a promising approach to probe phonon confinement and radial breathing mode in individual nanowires down to sub-10 nm regime.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Oct
pubmed:issn
1530-6992
pubmed:author
pubmed:issnType
Electronic
pubmed:day
13
pubmed:volume
10
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
3940-7
pubmed:year
2010
pubmed:articleTitle
Heteroepitaxial decoration of Ag nanoparticles on Si nanowires: a case study on Raman scattering and mapping.
pubmed:affiliation
School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371.
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't