Linked Life Data

20702932

Source:http://linkedlifedata.com/resource/pubmed/id/20702932

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
36
pubmed:dateCreated
2010-8-13
pubmed:abstractText
We report self-induced growth of vertically aligned (i.e. along the [111] direction), free-standing InAs nanowires on Si(111) substrates by solid-source molecular beam epitaxy. Implementation of an ultrathin amorphous SiO(x) mask on Si(111) facilitated epitaxial InAs nanowire growth, as confirmed by high-resolution x-ray diffraction 2theta-omega scans and transmission electron microscopy. Depending on growth temperature (in the range of 400-520 degrees C) substantial size variation of both nanowire length and diameter was found under preservation of uniform, non-tapered hexagon-shaped geometries. The majority of InAs nanowires exhibited phase-pure zinc blende crystal structure with few defective regions consisting of stacking faults. Photoluminescence spectroscopy at 20 K revealed peak emission of the InAs nanowires at 0.445 eV, which is approximately 30 meV blueshifted with respect to the emission of the bulk InAs reference due to radial quantum confinement effects. These results show a promising route towards integration of well-aligned, high structural quality InAs-based nanowires with the desired aspect ratio and tailored emission wavelengths on an Si platform.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Sep
pubmed:issn
1361-6528
pubmed:author
pubmed:issnType
Electronic
pubmed:day
10
pubmed:volume
21
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
365602
pubmed:year
2010
pubmed:articleTitle
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
pubmed:affiliation
Walter Schottky Institut and Physik Department, Technische Universität München, Garching, Germany. Gregor.Koblmueller@wsi.tum.de
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't