Linked Life Data

20436467

Source:http://linkedlifedata.com/resource/pubmed/id/20436467

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
6
pubmed:dateCreated
2010-6-4
pubmed:abstractText
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor-semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling with pronounced dependences on gate voltage and magnetic field.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Jun
pubmed:issn
1748-3395
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
5
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
458-64
pubmed:year
2010
pubmed:articleTitle
Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.
pubmed:affiliation
CEA, INAC/SPSMS/LaTEQS, 17 Rue des Martyrs, 38054 Grenoble, France. georgios.katsaros@cea.fr
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't