Source:http://linkedlifedata.com/resource/pubmed/id/20396227
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
18
|
| pubmed:dateCreated |
2010-4-16
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| pubmed:abstractText |
A multiangle single-wavelength ellipsometric method has been applied to the evaluation of anisotropy and stress in SiO(2) films grown on silicon substrate. The method is nondestructive, and it does not require a priori knowledge of the dielectric functions of the oxide layer. A novel theoretical anisotropic multiple-layer program is used to calculate the Fresnel reflection coefficients at various angles of incidence; and an iterative least-squares algorithm compares the theoretical calculations to the experimental data. The data-fitting process yields the index, the thickness, and the anisotropy of the oxide layer and also the index and thickness of the SiO(x) transition layer.
|
| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Sep
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| pubmed:issn |
0003-6935
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| pubmed:author | |
| pubmed:issnType |
Print
|
| pubmed:day |
15
|
| pubmed:volume |
21
|
| pubmed:owner |
NLM
|
| pubmed:authorsComplete |
Y
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| pubmed:pagination |
3307-13
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| pubmed:year |
1982
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| pubmed:articleTitle |
Strain-induced anisotropy measurement in oxide films grown on silicon.
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| pubmed:affiliation |
Hughes Research Laboratories, Malibu, California 90265, USA.
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| pubmed:publicationType |
Journal Article
|