Linked Life Data

20174003

Source:http://linkedlifedata.com/resource/pubmed/id/20174003

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
2
pubmed:dateCreated
2010-2-22
pubmed:abstractText
InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Jan
pubmed:issn
1094-4087
pubmed:author
pubmed:issnType
Electronic
pubmed:day
18
pubmed:volume
18
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
1756-61
pubmed:meshHeading
pubmed:year
2010
pubmed:articleTitle
InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.
pubmed:affiliation
INTEC Department, Photonics Research Group, Ghent University-IMEC, Gent, Belgium. sheng.zhen@intec.ugent.be
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't