Linked Life Data

20101075

Source:http://linkedlifedata.com/resource/pubmed/id/20101075

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
8
pubmed:dateCreated
2010-1-26
pubmed:abstractText
Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 degrees C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths--across the SRO film--has been proposed to explain the EL behaviour in these devices.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Feb
pubmed:issn
1361-6528
pubmed:author
pubmed:issnType
Electronic
pubmed:day
26
pubmed:volume
21
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
85710
pubmed:year
2010
pubmed:articleTitle
DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films.
pubmed:affiliation
INAOE, Electronics Department, Apartado 51, Puebla 72000, Mexico. amorales@inaoep.mx
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't