Source:http://linkedlifedata.com/resource/pubmed/id/19944535
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
2
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| pubmed:dateCreated |
2010-2-1
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| pubmed:abstractText |
Silicon nanocrystals (Si-nc) embedded in SiO(2) matrix and obtained by ion implantation (50keV, 1.0x10(17)Si/cm(2)) were characterized by means of three different transmission electron microscopy (TEM) techniques: Dark Field (DF), Scanning TEM Annular Dark Field (STEM-ADF) and Z contrast. The strengths and weaknesses of each technique for the characterization of the Si-nc were evaluated and discussed. DF imaging, which has the best contrast, was chosen to give the average Si-nc size evaluated to 5.6nm. On the other hand, STEM-ADF, which is only sensitive to the crystalline phase, provided an evaluation of the Si-nc density of 3.27x10(17)nc/cm(3). Finally, comparison between the STEM-ADF and Z contrast imaging permitted to evaluate the amorphous phase remaining after the annealing to around 12%.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Jan
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| pubmed:issn |
1879-2723
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| pubmed:author | |
| pubmed:copyrightInfo |
Copyright 2009 Elsevier B.V. All rights reserved.
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| pubmed:issnType |
Electronic
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| pubmed:volume |
110
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| pubmed:owner |
NLM
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| pubmed:authorsComplete |
Y
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| pubmed:pagination |
144-50
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| pubmed:year |
2010
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| pubmed:articleTitle |
Characterization of Si nanocrystals by different TEM-based techniques.
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| pubmed:affiliation |
INRS-EMT, 1650 boulevard Lionel-Boulet, Varennes (Québec), Canada J3X 1S2.
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| pubmed:publicationType |
Journal Article
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