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PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
Pt 6
pubmed:dateCreated
2009-10-21
pubmed:abstractText
Using scanning X-ray diffraction microscopy with a spot size of 220 x 600 nm, it was possible to inspect individual GaAs nanorods grown seed-free through circular openings in a SiN(x) mask in a periodic array with 3 microm spacing on GaAs[111]B. The focused X-ray beam allows the determination of the strain state of individual rods and, in combination with coherent diffraction imaging, it was also possible to characterize morphological details. Rods grown either in the centre or at the edge of the array show significant differences in shape, size and strain state.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Nov
pubmed:issn
1600-5775
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
16
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
796-802
pubmed:year
2009
pubmed:articleTitle
Individual GaAs nanorods imaged by coherent X-ray diffraction.
pubmed:affiliation
University of Siegen, Siegen, Germany. andreas.biermanns@uni-siegen.de
pubmed:publicationType
Journal Article