Source:http://linkedlifedata.com/resource/pubmed/id/19779232
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Predicate | Object |
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rdf:type | |
lifeskim:mentions | |
pubmed:issue |
42
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pubmed:dateCreated |
2009-9-25
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pubmed:abstractText |
A sensitive nanosized molybdenum oxide (MoO(x)) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO(x) had a conductivity approximately 300 S cm(-1). After 2 h annealing at 573 K, the conductivity of nanowires decreased 10 times to approximately 30 S cm(-1) and MoO(x) had photoconductivity. Nanosized MoO(x) wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.
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pubmed:language |
eng
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pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
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pubmed:month |
Oct
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pubmed:issn |
1361-6528
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pubmed:author | |
pubmed:issnType |
Electronic
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pubmed:day |
21
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pubmed:volume |
20
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pubmed:owner |
NLM
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pubmed:authorsComplete |
Y
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pubmed:pagination |
425305
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pubmed:year |
2009
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pubmed:articleTitle |
A nanosized photodetector fabricated by electron-beam-induced deposition.
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pubmed:affiliation |
High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-3003, Ibaraki, Japan. Makise.Kazumasa@nims.go.jp
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pubmed:publicationType |
Journal Article,
Research Support, Non-U.S. Gov't
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