Source:http://linkedlifedata.com/resource/pubmed/id/19757858
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
11
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| pubmed:dateCreated |
2009-11-11
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| pubmed:abstractText |
We demonstrate the growth of phosphorus doped Zn(1-x)Mg(x)O nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn(0.92)Mg(0.08)O:P NWs are likely obtained in reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of approximately 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Nov
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| pubmed:issn |
1530-6992
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| pubmed:author | |
| pubmed:issnType |
Electronic
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| pubmed:volume |
9
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| pubmed:owner |
NLM
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| pubmed:authorsComplete |
Y
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| pubmed:pagination |
3877-82
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| pubmed:year |
2009
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| pubmed:articleTitle |
Phosphorus doped Zn(1-x)Mg(x)O nanowire arrays.
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| pubmed:affiliation |
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
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| pubmed:publicationType |
Journal Article
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