Source:http://linkedlifedata.com/resource/pubmed/id/19658961
Switch to
Predicate | Object |
---|---|
rdf:type | |
lifeskim:mentions | |
pubmed:issue |
23
|
pubmed:dateCreated |
2009-8-7
|
pubmed:abstractText |
Germanium (Ge) becomes an "artificial metal" and a superconductor (T(c) approximately 5 K) above the pressure-induced semiconductor-(diamond structure)-to-metal (beta-Sn structure) transition at 10 GPa. We report single crystal resistance studies of the pressure-dependent metallic and metastable phases in the range 2.6 to 23 GPa, and show for a controlled pressure release, Ge is a metastable metal below 3 GPa. We find Ge has a superconducting upper critical field of 300 Oe (at 10.7 GPa and 1.8 K), above which a positive magnetoresistance consistent with that of a compensated closed orbit metal is observed.
|
pubmed:commentsCorrections | |
pubmed:language |
eng
|
pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
|
pubmed:month |
Jun
|
pubmed:issn |
0031-9007
|
pubmed:author | |
pubmed:issnType |
Print
|
pubmed:day |
12
|
pubmed:volume |
102
|
pubmed:owner |
NLM
|
pubmed:authorsComplete |
Y
|
pubmed:pagination |
237001
|
pubmed:dateRevised |
2010-5-24
|
pubmed:year |
2009
|
pubmed:articleTitle |
Pressure-dependent metallic and superconducting phases in a germanium artificial metal.
|
pubmed:affiliation |
Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA.
|
pubmed:publicationType |
Journal Article
|