Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
23
pubmed:dateCreated
2009-8-7
pubmed:abstractText
Germanium (Ge) becomes an "artificial metal" and a superconductor (T(c) approximately 5 K) above the pressure-induced semiconductor-(diamond structure)-to-metal (beta-Sn structure) transition at 10 GPa. We report single crystal resistance studies of the pressure-dependent metallic and metastable phases in the range 2.6 to 23 GPa, and show for a controlled pressure release, Ge is a metastable metal below 3 GPa. We find Ge has a superconducting upper critical field of 300 Oe (at 10.7 GPa and 1.8 K), above which a positive magnetoresistance consistent with that of a compensated closed orbit metal is observed.
pubmed:commentsCorrections
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Jun
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
12
pubmed:volume
102
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
237001
pubmed:dateRevised
2010-5-24
pubmed:year
2009
pubmed:articleTitle
Pressure-dependent metallic and superconducting phases in a germanium artificial metal.
pubmed:affiliation
Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA.
pubmed:publicationType
Journal Article