Linked Life Data

19506652

Source:http://linkedlifedata.com/resource/pubmed/id/19506652

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
12
pubmed:dateCreated
2009-6-9
pubmed:abstractText
We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Jun
pubmed:issn
1094-4087
pubmed:author
pubmed:issnType
Electronic
pubmed:day
8
pubmed:volume
17
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
10019-24
pubmed:meshHeading
pubmed:year
2009
pubmed:articleTitle
Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.
pubmed:affiliation
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA. slcheng@stanford.edu
pubmed:publicationType
Journal Article, Research Support, U.S. Gov't, Non-P.H.S., Research Support, Non-U.S. Gov't