Source:http://linkedlifedata.com/resource/pubmed/id/19441504
| Subject | Predicate | Object | Context |
|---|---|---|---|
| pubmed-article:19441504 | rdf:type | pubmed:Citation | lld:pubmed |
| pubmed-article:19441504 | lifeskim:mentions | umls-concept:C0030015 | lld:lifeskim |
| pubmed-article:19441504 | lifeskim:mentions | umls-concept:C0037107 | lld:lifeskim |
| pubmed-article:19441504 | lifeskim:mentions | umls-concept:C0259981 | lld:lifeskim |
| pubmed-article:19441504 | lifeskim:mentions | umls-concept:C1707903 | lld:lifeskim |
| pubmed-article:19441504 | lifeskim:mentions | umls-concept:C1721058 | lld:lifeskim |
| pubmed-article:19441504 | pubmed:issue | 2 | lld:pubmed |
| pubmed-article:19441504 | pubmed:dateCreated | 2009-5-15 | lld:pubmed |
| pubmed-article:19441504 | pubmed:abstractText | The bonding structure and the optical properties of silicon-rich silicon oxide films which were prepared using plasma-enhanced chemical vapor deposition (PECVD) with thermal oxidation were studied in detail. The composition and bonding structures were explored using X-ray photoelectron spectroscopy (XPS). The luminescent properties were studied using Raman spectroscopy and photoluminescence (PL) measurements. Results show that high-temperature (approximately 1000 degrees C) annealing of as-deposited Si-rich silicon oxide gives rise to phase separation and formation of crystalline Si phases in the oxide films. Upon high temperature annealing, the PL (550-900 nm) intensity was significantly reduced in stoichiometric oxide or in low Si-content (prepared with [N2O]/[SiH4] gas flow ratio > 2.5) films whereas an opposite trend was found in higher Si-rich samples. Particularly, for the red band (650 nm) and the infrared band (750 nm), the PL intensity was significantly enhanced by annealing slightly Si-rich samples ([N2O] / [SiH4] = 2.5) at 1100 degrees C. This observation was explained by the formation of Si nanocrystallites via phase separation reaction and the removal of defect-related absorption centers during annealing. | lld:pubmed |
| pubmed-article:19441504 | pubmed:language | eng | lld:pubmed |
| pubmed-article:19441504 | pubmed:journal | http://linkedlifedata.com/r... | lld:pubmed |
| pubmed-article:19441504 | pubmed:status | PubMed-not-MEDLINE | lld:pubmed |
| pubmed-article:19441504 | pubmed:month | Feb | lld:pubmed |
| pubmed-article:19441504 | pubmed:issn | 1533-4880 | lld:pubmed |
| pubmed-article:19441504 | pubmed:author | pubmed-author:FilipVV | lld:pubmed |
| pubmed-article:19441504 | pubmed:author | pubmed-author:WongC KCK | lld:pubmed |
| pubmed-article:19441504 | pubmed:author | pubmed-author:WongHeiH | lld:pubmed |
| pubmed-article:19441504 | pubmed:issnType | lld:pubmed | |
| pubmed-article:19441504 | pubmed:volume | 9 | lld:pubmed |
| pubmed-article:19441504 | pubmed:owner | NLM | lld:pubmed |
| pubmed-article:19441504 | pubmed:authorsComplete | Y | lld:pubmed |
| pubmed-article:19441504 | pubmed:pagination | 1272-6 | lld:pubmed |
| pubmed-article:19441504 | pubmed:year | 2009 | lld:pubmed |
| pubmed-article:19441504 | pubmed:articleTitle | Photoluminescence of silicon nanocrystals embedded in silicon oxide. | lld:pubmed |
| pubmed-article:19441504 | pubmed:affiliation | Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, China. | lld:pubmed |
| pubmed-article:19441504 | pubmed:publicationType | Journal Article | lld:pubmed |