Source:http://linkedlifedata.com/resource/pubmed/id/19441504
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
2
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| pubmed:dateCreated |
2009-5-15
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| pubmed:abstractText |
The bonding structure and the optical properties of silicon-rich silicon oxide films which were prepared using plasma-enhanced chemical vapor deposition (PECVD) with thermal oxidation were studied in detail. The composition and bonding structures were explored using X-ray photoelectron spectroscopy (XPS). The luminescent properties were studied using Raman spectroscopy and photoluminescence (PL) measurements. Results show that high-temperature (approximately 1000 degrees C) annealing of as-deposited Si-rich silicon oxide gives rise to phase separation and formation of crystalline Si phases in the oxide films. Upon high temperature annealing, the PL (550-900 nm) intensity was significantly reduced in stoichiometric oxide or in low Si-content (prepared with [N2O]/[SiH4] gas flow ratio > 2.5) films whereas an opposite trend was found in higher Si-rich samples. Particularly, for the red band (650 nm) and the infrared band (750 nm), the PL intensity was significantly enhanced by annealing slightly Si-rich samples ([N2O] / [SiH4] = 2.5) at 1100 degrees C. This observation was explained by the formation of Si nanocrystallites via phase separation reaction and the removal of defect-related absorption centers during annealing.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Feb
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| pubmed:issn |
1533-4880
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| pubmed:author | |
| pubmed:issnType |
Print
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| pubmed:volume |
9
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| pubmed:owner |
NLM
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| pubmed:authorsComplete |
Y
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| pubmed:pagination |
1272-6
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| pubmed:year |
2009
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| pubmed:articleTitle |
Photoluminescence of silicon nanocrystals embedded in silicon oxide.
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| pubmed:affiliation |
Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.
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| pubmed:publicationType |
Journal Article
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