Linked Life Data

19417251

Source:http://linkedlifedata.com/resource/pubmed/id/19417251

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
1
pubmed:dateCreated
2009-5-6
pubmed:abstractText
A II-VI wide-bandgap resonant cavity light-emitting diode is presented. The active region consists of CdSe quantum dots embedded in ZnSSe/MgS barriers, resulting in improved quantum efficiency at elevated temperatures. The resonant cavity is formed by a 14-period bottom distributed Bragg reflector and the semiconductor to air interface on top of the structure. Temperature dependent micro-electroluminescence measurements reveal emission of a single quantum dot up to 90 K. The turn-on voltages are 6 V at 4 K and 4 V at room temperature. These results are promising for the realization of green surface-emitting devices in general, and especially for an electrically driven prospective single photon source operating at room temperature.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Jan
pubmed:issn
1361-6528
pubmed:author
pubmed:issnType
Electronic
pubmed:day
7
pubmed:volume
20
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
015401
pubmed:dateRevised
2010-3-11
pubmed:year
2009
pubmed:articleTitle
A CdSe quantum dot based resonant cavity light-emitting diode showing single line emission up to 90 K.
pubmed:affiliation
Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen, Germany. gust@uni-bremen.de
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't