Linked Life Data

19405696

Source:http://linkedlifedata.com/resource/pubmed/id/19405696

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
4
pubmed:dateCreated
2009-5-1
pubmed:abstractText
Tin oxide is a well known nonstoichiometric material with dual valency. The invariance of stoichiometry is very intriguing. As of today no report is available for preparing perfect stoichiometric tin oxide. Here we report a novel method to prepare stoichiometric tin oxide by modifying the known plasma enhanced chemical vapor deposition technique using SnCl(4)-xH(2)O as precursor and O(2) as reactant gas at various temperatures from 300 to 800 degrees C. Tetragonal rutile structure of SnO(2) was found, grown along the [110] direction. X-ray photoelectron spectroscopic measurement showed constant Sn/O ratio. Sn 3d and O 1s were found composed of only Sn(4+) (487.2 eV) and O-Sn(4+) (531.2 eV) with equal peak widths. Raman band intensity ( approximately 633 cm(-1)) was found increasing with temperature, indicating the morphological changes. Sheet resistance of approximately 0.5 kOmega/at 300 degrees C was measured that reduces to approximately 0.1 kOmega/at 600 degrees C. It is found that film stoichiometry remains unaltered, while the structural morphology changes significantly.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Apr
pubmed:issn
1089-7623
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
80
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
045112
pubmed:year
2009
pubmed:articleTitle
A novel method for preparing stoichiometric SnO(2) thin films at low temperature.
pubmed:affiliation
School of Chemical Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756, South Korea.
pubmed:publicationType
Journal Article