Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
14
pubmed:dateCreated
2009-4-27
pubmed:abstractText
We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as the wave functions and their overlaps were tuned. The range of magnitudes for the lifetime indicates a possible route to silicon-based quantum cascade lasers.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Apr
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
10
pubmed:volume
102
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
147401
pubmed:year
2009
pubmed:articleTitle
Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy.
pubmed:affiliation
Institute of Semiconductor and Solid State Physics, University of Linz, Linz, Austria.
pubmed:publicationType
Journal Article