Linked Life Data

19257375

Source:http://linkedlifedata.com/resource/pubmed/id/19257375

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
3
pubmed:dateCreated
2009-3-4
pubmed:abstractText
We report on spin injection experiments at a Co/Al2O3/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop DeltaV at the interface as high as 1.2 mV for a current density of 0.34 nA.microm(-2). This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al2O3/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers traveling back into the ferromagnetic contact reproduces accurately the experimental results.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Jan
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
23
pubmed:volume
102
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
036601
pubmed:year
2009
pubmed:articleTitle
Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.
pubmed:affiliation
Unité Mixte de Physique CNRS-Thales, Route départementale 128, 91767 Palaiseau Cedex and Université Paris-Sud 91405, Orsay, France. michael.tran@thalesgroup.com
pubmed:publicationType
Journal Article