Linked Life Data

19206286

Source:http://linkedlifedata.com/resource/pubmed/id/19206286

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
12
pubmed:dateCreated
2009-2-11
pubmed:abstractText
We use in situ low temperature scanning tunneling microscopy (STM) to investigate the growth mechanism of epitaxial graphene (EG) thermally grown on Si-terminated 6H-SiC(0001). Our detailed study of the transition from monolayer EG to trilayer EG reveals that EG adopts a bottom-up growth mechanism. The thermal decomposition of one single SiC bilayer underneath the EG layers causes the accumulation of carbon atoms to form a new graphene buffer layer at the EG/SiC interface. Atomically resolved STM images show that the top EG layer is physically continuous across the boundaries between the monolayer and bilayer EG regions and between the bilayer and trilayer EG regions.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Dec
pubmed:issn
1936-086X
pubmed:author
pubmed:issnType
Electronic
pubmed:day
23
pubmed:volume
2
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
2513-8
pubmed:meshHeading
pubmed:year
2008
pubmed:articleTitle
Bottom-up growth of epitaxial graphene on 6H-SiC(0001).
pubmed:affiliation
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore.
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't