Source:http://linkedlifedata.com/resource/pubmed/id/19198509
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
10
|
| pubmed:dateCreated |
2009-2-9
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| pubmed:abstractText |
We have fabricated a series of hole only devices with tungsten oxide (WO3) and molybdenum oxide (MoO3) n-doping materials in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transport layer, and electron only devices with CsF and Cs2CO3 p-doping materials in 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transport layer. Current-voltage characteristics and conductivity of these devices are investigated. The optimal conditions for ohmic injection and low resistance properties, and process margins of each dopant are reported in this paper.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
|
| pubmed:month |
Oct
|
| pubmed:issn |
1533-4880
|
| pubmed:author | |
| pubmed:issnType |
Print
|
| pubmed:volume |
8
|
| pubmed:owner |
NLM
|
| pubmed:authorsComplete |
Y
|
| pubmed:pagination |
5606-9
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| pubmed:year |
2008
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| pubmed:articleTitle |
Electrical characterization of N- and P-doped hole and electron only organic devices.
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| pubmed:affiliation |
Advanced Display Research Center and Department of Information Display, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea.
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| pubmed:publicationType |
Journal Article
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