Source:http://linkedlifedata.com/resource/pubmed/id/18759390
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rdf:type | |
lifeskim:mentions | |
pubmed:issue |
38
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pubmed:dateCreated |
2008-9-18
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pubmed:abstractText |
In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as approximately 44 cm2 V(-1) s(-1) are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of approximately 10(6) and <5 V operating voltages is encouraging for high-speed applications.In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ~44 cm2 V(-1) s(-1) are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of approximately 10(6) and <5 V operating voltages is encouraging for high-speed applications.
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pubmed:language |
eng
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pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
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pubmed:month |
Sep
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pubmed:issn |
1520-5126
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pubmed:author | |
pubmed:issnType |
Electronic
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pubmed:day |
24
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pubmed:volume |
130
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pubmed:owner |
NLM
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pubmed:authorsComplete |
Y
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pubmed:pagination |
12580-1
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pubmed:year |
2008
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pubmed:articleTitle |
High performance solution-processed indium oxide thin-film transistors.
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pubmed:affiliation |
Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.
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pubmed:publicationType |
Journal Article
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