Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
5
pubmed:dateCreated
2008-8-25
pubmed:abstractText
The diamond thin films were deposited on silicon substrates under invariable conditions of process pressure, substrate temperature negative direct-current (dc) bias of substrate and microwave power while the rations of methane (CH4) to hydrogen (H2) changing from 3% to 5% and 9% using electron-cyclotron-resonance microwave plasma-assisted chemical vapor deposition technique (ECRCVD). In situ Fourier transform infrared spectroscopy (FTIR) have been used to study the plasma species absorbed on the substrate surfaces as well as the species above the substrates surfaces both before and during the nucleation and film growth. It is demonstrated that these techniques can provide useful information on the early stages of diamond growth. When correlated with film properties measured by Raman spectroscopy and scanning electron microscopy, the results from FTIR indicate that the absorption of the graphitic and diamond phases are related to the ratio of CH4 to H2 and can be identified at the early stages of film growth.
pubmed:language
chi
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
May
pubmed:issn
1000-0593
pubmed:author
pubmed:issnType
Print
pubmed:volume
28
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
1049-51
pubmed:year
2008
pubmed:articleTitle
[The study of infrared absorption spectrum of diamond during growth by FTIR].
pubmed:affiliation
College of Science, Changchun University of Science and Technology, Changchun 130022, China.
pubmed:publicationType
Journal Article, English Abstract