Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
8
pubmed:dateCreated
2008-8-7
pubmed:abstractText
The discovery of graphene raises the prospect of a new class of nanoelectronic devices based on the extraordinary physical properties of this one-atom-thick layer of carbon. Unlike two-dimensional electron layers in semiconductors, where the charge carriers become immobile at low densities, the carrier mobility in graphene can remain high, even when their density vanishes at the Dirac point. However, when the graphene sample is supported on an insulating substrate, potential fluctuations induce charge puddles that obscure the Dirac point physics. Here we show that the fluctuations are significantly reduced in suspended graphene samples and we report low-temperature mobility approaching 200,000 cm2 V-1 s-1 for carrier densities below 5 x 109 cm-2. Such values cannot be attained in semiconductors or non-suspended graphene. Moreover, unlike graphene samples supported by a substrate, the conductivity of suspended graphene at the Dirac point is strongly dependent on temperature and approaches ballistic values at liquid helium temperatures. At higher temperatures, above 100 K, we observe the onset of thermally induced long-range scattering.
pubmed:commentsCorrections
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
Aug
pubmed:issn
1748-3395
pubmed:author
pubmed:issnType
Electronic
pubmed:volume
3
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
491-5
pubmed:meshHeading
pubmed:year
2008
pubmed:articleTitle
Approaching ballistic transport in suspended graphene.
pubmed:publicationType
Letter, Research Support, U.S. Gov't, Non-P.H.S.