Linked Life Data

18447484

Source:http://linkedlifedata.com/resource/pubmed/id/18447484

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
16
pubmed:dateCreated
2008-5-1
pubmed:abstractText
Thermal decomposition of ultrathin oxide layers on silicon surface was investigated with temperature programed desorption. Oxide layers were formed on Si(100) at 400 degrees C by exposure to O(2) molecular beam. Desorption spectrum for oxygen coverages between 1.7 and 2.6 ML exhibits a single dominant peak with an additional broad peak at lower temperatures. The former peak corresponds to stable binding states of O atoms at dimer bridge sites and dimer backbond sites. The high peak intensity indicates that most O atoms are at stable states. The latter peak corresponds to an unstable binding state, where O atoms are presumably trapped at dangling bonds. The SiO desorption rate from the stable binding states is well described by Avrami kinetics, suggesting that the decomposition process is spatially inhomogeneous with void formation and growth. The rate-determining step is the reaction at void perimeter even if the overlap between voids becomes quite large. The Avrami exponents determined from our experiment indicate that the increase in the initial coverage makes the oxide layer more stable and suppresses the rate of void formation at the potential nucleation sites.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Apr
pubmed:issn
0021-9606
pubmed:author
pubmed:issnType
Print
pubmed:day
28
pubmed:volume
128
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
164712
pubmed:year
2008
pubmed:articleTitle
Inhomogeneous decomposition of ultrathin oxide films on Si(100): application of Avrami kinetics to thermal desorption spectra.
pubmed:affiliation
Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. kine@fel.t.u-tokyo.ac.jp
pubmed:publicationType
Journal Article