Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
4
pubmed:dateCreated
2008-4-10
pubmed:abstractText
We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Apr
pubmed:issn
1530-6984
pubmed:author
pubmed:issnType
Print
pubmed:volume
8
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
1100-4
pubmed:year
2008
pubmed:articleTitle
Electrical properties of self-assembled branched InAs nanowire junctions.
pubmed:affiliation
Division of Solid State Physics and The Nanometre Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden.
pubmed:publicationType
Journal Article