18246136

Source:http://linkedlifedata.com/resource/pubmed/id/18246136

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Predicate	Object
rdf:type	pubmed:Citation
lifeskim:mentions	umls-concept:C0023089, umls-concept:C0061005, umls-concept:C0991560
pubmed:issue	3
pubmed:dateCreated	2008-2-4
pubmed:abstractText	We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.
pubmed:language	eng
pubmed:journal	http://linkedlifedata.com/resource/pubmed/journal/7708433
pubmed:status	PubMed-not-MEDLINE
pubmed:month	Feb
pubmed:issn	0146-9592
pubmed:author	pubmed-author:JiangMinhuaM, pubmed-author:LuoHangH, pubmed-author:TangDingyuanD, pubmed-author:WangJiyangJ, pubmed-author:WangZhengpingZ, pubmed-author:XieGuoqiangG, pubmed-author:YuHaohaiH, pubmed-author:YuYongguiY, pubmed-author:ZhangHuaijinH
pubmed:issnType	Print
pubmed:day	1
pubmed:volume	33
pubmed:owner	NLM
pubmed:authorsComplete	Y
pubmed:pagination	225-7
pubmed:year	2008
pubmed:articleTitle	Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.
pubmed:affiliation	State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.
pubmed:publicationType	Journal Article