Linked Life Data

17930620

Source:http://linkedlifedata.com/resource/pubmed/id/17930620

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
13
pubmed:dateCreated
2007-10-12
pubmed:abstractText
In situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the G(-) band, accompanied by a substantial decrease of its linewidth, is observed with electron or hole doping. In addition, we see an increase in the Raman frequency of the G(+) band in semiconducting tubes. These results are quantitatively explained using ab initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotubes.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Sep
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
28
pubmed:volume
99
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
136803
pubmed:year
2007
pubmed:articleTitle
Doping in carbon nanotubes probed by Raman and transport measurements.
pubmed:affiliation
Department of Physics, Indian Institute of Science, Bangalore 560012, India.
pubmed:publicationType
Journal Article