Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
12
pubmed:dateCreated
2006-12-13
pubmed:abstractText
Donor- and acceptor-type (D/A) impurities play central roles in controlling the physical properties of semiconductors. With continued miniaturization of information processing devices, the relationship between quantum confinement and D/A ionization energies becomes increasingly important. Here, we provide direct spectroscopic evidence that impurity D/A levels in doped semiconductor nanostructures are energetically pinned, resulting in variations in D/A binding energies with increasing quantum confinement. Using magnetic circular dichroism spectroscopy, the donor binding energies of Co2+ ions in colloidal ZnSe quantum dots have been measured as a function of quantum confinement and analyzed in conjunction with ab initio density functional theory calculations. The resulting experimental demonstration of pinned impurity levels in quantum dots has far-reaching implications for physical phenomena involving impurity-carrier interactions in doped semiconductor nanostructures, including in the emerging field of semiconductor spintronics where magnetic-dopant-carrier exchange interactions define the functionally relevant properties of diluted magnetic semiconductors.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Dec
pubmed:issn
1530-6984
pubmed:author
pubmed:issnType
Print
pubmed:volume
6
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
2887-92
pubmed:year
2006
pubmed:articleTitle
Energetic pinning of magnetic impurity levels in quantum-confined semiconductors.
pubmed:affiliation
Department of Chemistry, Box 351700, University of Washington, Seattle, Washington 98195-1700, USA.
pubmed:publicationType
Journal Article, Research Support, U.S. Gov't, Non-P.H.S., Research Support, Non-U.S. Gov't