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PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
5791
pubmed:dateCreated
2006-9-1
pubmed:abstractText
We have used low-energy electron microscopy to measure step motion on Si(111) and Si(001) near dislocations during growth and sublimation. Steps on Si(111) exhibit the classic rotating Archimedean spiral motion, as predicted by Burton, Cabrera, and Frank. Steps on Si(001), however, move in a strikingly different manner. The strain-relieving anomalous behavior can be understood in detail by considering how the local step velocity is affected by the nonuniform strain field arising from the dislocation. We show how the dynamic step-flow pattern is related to the dislocation slip system.
pubmed:commentsCorrections
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Sep
pubmed:issn
1095-9203
pubmed:author
pubmed:issnType
Electronic
pubmed:day
1
pubmed:volume
313
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
1266-9
pubmed:dateRevised
2007-3-19
pubmed:year
2006
pubmed:articleTitle
Anomalous spiral motion of steps near dislocations on silicon surfaces.
pubmed:affiliation
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. jbhannon@us.ibm.com
pubmed:publicationType
Journal Article