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PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
20
pubmed:dateCreated
2006-6-29
pubmed:abstractText
GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3 microm with a side-mode suppression ratio greater than 25 dB and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than 220 GHz of continuous tuning by temperature or current. The direct absorption of CH4 is demonstrated to be possible with high spectral selectivity.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Jul
pubmed:issn
0003-6935
pubmed:author
pubmed:issnType
Print
pubmed:day
10
pubmed:volume
45
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
4957-65
pubmed:year
2006
pubmed:articleTitle
Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 microm above room temperature for application in tunable diode laser absorption spectroscopy.
pubmed:affiliation
Centre d'Electronique et de Micro-Optoélectronique de Montpellier, Centre National de la Recherche Scientifique, Unité Mixte de Recherche 5507, Place Eugène Bataillon, CC 67, Université Montpellier 2, France.
pubmed:publicationType
Journal Article